An Optimized Dip Coating Approach for Metallic, Dielectric, and Semiconducting Nanomaterial-Based Optical Thin Film Fabrication

The field of optical thin films has garnered significant attention due to their potential applications in visible light communication, sensing, and imaging. Among the various fabrication methods available, conventional layer-by-layer (LBL) dip coating is less sophisticated more economical. Nevertheless, this approach frequently encounters deficiencies precise control growth films. This work aimed at properly comprehending conditions associated with LBL process optimizing obtain best film for different materials: metallic (Ag), semiconducting (ZnO), insulating (SiO2). optimization surface functionalization 3-aminopropyltriethoxysilane (APTES) together other parameters like dipping time, drying number dipping–drying cycles, timing intermediate APTES layers led controlled Atomic force microscopy scanning electron revealed even deposition case ZnO SiO2 from very beginning, while Ag NPs, was observed be uneven gradually became smooth as increased, a layer could after over 100 dipping.